P-channel MOSFET, surface mount, SC package. Features 12V drain-source breakdown voltage and 4.3A continuous drain current. Offers low 70mΩ drain-source resistance at a nominal Vgs of -1V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.9W. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 10ns.
PackageSC
Resistance0.07R
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA913DJ-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 400pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.9W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | Unknown |
| Resistance | 0.07R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA913DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA913DJ-T1-GE3 to view detailed technical specifications.
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