N-channel MOSFET featuring 20V drain-source voltage and 4.5A continuous drain current. Offers a low 53mΩ drain-source on-resistance at 4.5V gate-source voltage, with a maximum power dissipation of 6.5W. This surface-mount device, packaged in SC, boasts fast switching characteristics with a 5ns turn-on delay and 30ns turn-off delay. Operating across a wide temperature range from -55°C to 150°C, it is RoHS compliant.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIA914DJ-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 53mR |
| Fall Time | 53ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 53mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA914DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA914DJ-T1-GE3 to view detailed technical specifications.
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