The SIA917DJ-T1-E3 is a P-CHANNEL power MOSFET with a breakdown voltage of 20V and a continuous drain current of 4.5A. It has a drain to source resistance of 110mR and a power dissipation of 6.5W. The device is packaged in tape and reel quantities of 3000 and has an operating temperature range of -55°C to 150°C. It is not RoHS compliant.
PolarityP-CHANNEL
Power6.5W
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Technical Specifications
Vishay SIA917DJ-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 110mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 6.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SIA917DJ-T1-E3 Datasheet
Download the complete datasheet for Vishay SIA917DJ-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.