P-channel MOSFET featuring 20V drain-source voltage and 4.5A continuous drain current. Surface mountable in an SC package, this component offers a maximum drain-source on-resistance of 110mΩ. Operating within a temperature range of -55°C to 150°C, it boasts a 6.5W maximum power dissipation and is RoHS compliant. Key switching characteristics include a 10ns fall time and 15ns turn-off delay.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA917DJ-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 110mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA917DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA917DJ-T1-GE3 to view detailed technical specifications.
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