N-channel MOSFET featuring 20V drain-source voltage and 5.1A continuous drain current. Offers low 46mΩ drain-source resistance (Rds On Max) and fast switching with 5ns turn-on delay and 12ns fall time. Designed for surface mount applications with a compact 1.6mm x 1.6mm x 0.75mm footprint, operating from -55°C to 150°C. This RoHS compliant component is supplied in tape and reel packaging.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIB406EDK-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Resistance | 46mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Input Capacitance | 350pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 46mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.003386oz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIB406EDK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIB406EDK-T1-GE3 to view detailed technical specifications.
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