N-channel MOSFET featuring 30V drain-source voltage and 9A continuous drain current. Offers low 34mΩ drain-to-source resistance at a 400mV threshold voltage. Designed for surface mount applications with a maximum power dissipation of 13W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with 6ns turn-on delay and 10ns fall time. Packaged in tape and reel for efficient assembly.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIB410DK-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 13W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 400mV |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.003386oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIB410DK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIB410DK-T1-GE3 to view detailed technical specifications.
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