P-channel MOSFET with 20V drain-source voltage and 4.8A continuous drain current. Features 66mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -1V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.4W. Packaged in a surface-mount SC-75-6L (PPAK) for tape and reel deployment.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIB411DK-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Resistance | 66mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 66mR |
| Dual Supply Voltage | 20V |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 66mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIB411DK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIB411DK-T1-GE3 to view detailed technical specifications.
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