P-channel MOSFET with 20V drain-source voltage and 4.8A continuous drain current. Features 66mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -1V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.4W. Packaged in a surface-mount SC-75-6L (PPAK) for tape and reel deployment.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIB411DK-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
4.8A
Drain to Source Resistance
66mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
66mR
Dual Supply Voltage
20V
Fall Time
75ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
470pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.4W
Mount
Surface Mount
Nominal Vgs
-1V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
66mR
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Turn-Off Delay Time
45ns
Compliance
RoHS
Compliant
Datasheet
Vishay SIB411DK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIB411DK-T1-GE3 to view detailed technical specifications.
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