N-Channel MOSFET, 20V Drain-Source Voltage, 9A Continuous Drain Current, 13W Max Power Dissipation. Features low 34mΩ Rds(on) at 4.5V Vgs, 535pF input capacitance, and fast switching times including 6.6ns turn-on delay and 14ns fall time. Surface mountable in a compact 1.6mm x 1.6mm x 0.75mm package, operating from -55°C to 150°C.
Resistance0.034R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIB412DK-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 535pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 13W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 34mR |
| Resistance | 0.034R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 6.6ns |
| Weight | 0.003386oz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIB412DK-T1-E3 Datasheet
Download the complete datasheet for Vishay SIB412DK-T1-E3 to view detailed technical specifications.
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