N-channel MOSFET, TrenchFET® series, featuring 20V Drain to Source Voltage (Vdss) and 9A Continuous Drain Current (ID). Offers low 34mR Drain to Source Resistance (Rds On Max) and 2.4W Max Power Dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in SC for surface mount applications, with fast switching times including 6.6ns Turn-On Delay and 14ns Fall Time.
PackageSC
Resistance0.034R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIB412DK-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 535pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Nominal Vgs | -1.5V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.4W |
| Rds On Max | 34mR |
| Resistance | 0.034R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 6.6ns |
| Weight | 0.003386oz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIB412DK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIB412DK-T1-GE3 to view detailed technical specifications.
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