P-channel MOSFET, 8V drain-source voltage, 5.6A continuous drain current, and 52mΩ drain-source resistance. Features a 675pF input capacitance and 2.4W power dissipation, operating from -55°C to 150°C. Surface mountable in an SC package, this component offers fast switching with turn-on delay of 13ns and fall time of 18ns.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power2.4W
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Technical Specifications
Vishay SIB417DK-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | -8V |
| Dual Supply Voltage | 8V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 5V |
| Input Capacitance | 675pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.4W |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIB417DK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIB417DK-T1-GE3 to view detailed technical specifications.
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