P-channel Power MOSFET featuring a 12V drain-source voltage and 7.8A continuous drain current. This single-element transistor utilizes an enhancement mode channel and is housed in a compact, 6-pin PowerPAK SC-75 surface-mount package with a 0.5mm pin pitch. Key specifications include a maximum drain-source resistance of 27mOhm at 4.5V and a maximum power dissipation of 2400mW, operating across a temperature range of -55°C to 150°C.
PackagePowerPAK SC-75
MountingSurface Mount
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Technical Specifications
Vishay SiB455EDK-T1-GE3 technical specifications.
General
| Package Family Name | PowerPAK SC-75 |
| Package/Case | PowerPAK SC-75 |
| Lead Shape | No Lead |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.75 |
| Seated Plane Height (mm) | 0.85(Max) |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 12V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 7.8A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 20@8V|[email protected]nC |
| Maximum Power Dissipation | 2400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiB455EDK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiB455EDK-T1-GE3 to view detailed technical specifications.
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