N-channel MOSFET with 12V drain-source voltage and 9A continuous drain current. Features low 16mΩ drain-source on-resistance and 2.4W power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a SC75-6 package, this component offers fast switching with 10ns turn-on and fall times. RoHS compliant and lead-free.
MountingSurface Mount
PolarityP-CHANNEL
Power2.4W
Quick Jump:
Technical Specifications
Vishay SIB488DK-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 20MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 725pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 13W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.4W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.003386oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIB488DK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIB488DK-T1-GE3 to view detailed technical specifications.
No datasheet is available for this part.