Dual P-channel MOSFET, TrenchFET® series, designed for surface mount applications. Features a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current of 1.5A. Offers a low Drain to Source Resistance (Rds On Max) of 295mR at a Gate to Source Voltage (Vgs) of 8V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.1W. Includes fast switching characteristics with turn-on delay time of 12ns and fall time of 45ns. Packaged in tape and reel, this RoHS compliant component is ideal for various electronic circuits.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIB911DK-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Resistance | 295mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 115pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 295mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.003386oz |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIB911DK-T1-E3 Datasheet
Download the complete datasheet for Vishay SIB911DK-T1-E3 to view detailed technical specifications.
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