P-channel MOSFET featuring 20V drain-source breakdown voltage and 2.6A continuous drain current. Surface mountable in an SC package, this component offers a maximum on-resistance of 295mΩ. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 3.1W. RoHS compliant and lead-free, it includes a 115pF input capacitance and 31ns fall time.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SIB911DK-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 295mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 295mR |
| Dual Supply Voltage | 20V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 115pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 295mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIB911DK-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIB911DK-T1-GE3 to view detailed technical specifications.
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