N-CHANNEL MOSFET featuring 30V drain-source breakdown voltage and 175A continuous drain current. Offers low 2.4mOhm drain-source on-resistance at 10V gate-source voltage, with a maximum of 3.3mOhm. Supports 125W maximum power dissipation and operates across a -55°C to 150°C temperature range. Designed for through-hole and surface mount applications, packaged in TO-220-3, and supplied on tape and reel.
PackageTO-220-3
MountingThrough Hole, Surface Mount
PolarityN-CHANNEL
Power5.2W
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Technical Specifications
Vishay SIE726DF-T1-GE3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.3mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole, Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Radiation Hardening | No |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Series | SkyFET®, TrenchFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIE726DF-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIE726DF-T1-GE3 to view detailed technical specifications.
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