N-Channel MOSFET, 30V Drain-Source Voltage (Vdss), 7.2mΩ Max Drain-Source On-Resistance (Rds On Max), and 20.6A Continuous Drain Current (ID). Features a 1.6nF Input Capacitance, 2.2V Threshold Voltage, and 10ns Fall Time. Designed for surface mount applications with a 150°C max operating temperature. RoHS compliant and packaged in tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power5.2W
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Technical Specifications
Vishay SIE800DF-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 20.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.2mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Radiation Hardening | No |
| Rds On Max | 7.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIE800DF-T1-E3 Datasheet
Download the complete datasheet for Vishay SIE800DF-T1-E3 to view detailed technical specifications.
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