N-channel MOSFET, 40V Vds, 33A continuous drain current, and 2.6mΩ max Rds(on). Features include 125W max power dissipation, 150°C max operating temperature, and a 2.3V threshold voltage. This surface mount component offers fast switching with 10ns fall time, 20ns turn-on delay, and 60ns turn-off delay. It boasts low input capacitance of 8.3nF and is packaged in tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIE812DF-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 33A |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 2.6MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.8mm |
| Input Capacitance | 8.3nF |
| Lead Free | Lead Free |
| Length | 6.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.3V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 20ns |
| Width | 5.16mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIE812DF-T1-E3 Datasheet
Download the complete datasheet for Vishay SIE812DF-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.