N-CHANNEL MOSFET, 20V Vdss, 31A continuous drain current, and 3.4mΩ Rds On at 10V. This surface mount component offers a maximum power dissipation of 104W and operates within a temperature range of -55°C to 150°C. Features include a 2.3V threshold voltage, 4.2nF input capacitance, and fast switching times with a 15ns turn-on delay and 10ns fall time. Packaged on tape and reel, this RoHS compliant device is designed for efficient power management applications.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIE822DF-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 31A |
| Drain to Source Resistance | 3.4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5.5MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.8mm |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Length | 6.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.3V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
| Width | 5.16mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIE822DF-T1-E3 Datasheet
Download the complete datasheet for Vishay SIE822DF-T1-E3 to view detailed technical specifications.
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