N-channel MOSFET with 40V drain-source voltage and 23.6A continuous drain current. Features low 5.5mΩ drain-source on-resistance and 104W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a 10-POLARPAK package, this component offers fast switching with turn-on delay of 45ns and fall time of 55ns. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIE832DF-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 23.6A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 5.5mR |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.8mm |
| Input Capacitance | 3.8nF |
| Lead Free | Lead Free |
| Length | 6.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 45ns |
| Width | 5.16mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIE832DF-T1-E3 Datasheet
Download the complete datasheet for Vishay SIE832DF-T1-E3 to view detailed technical specifications.
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