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Technical Specifications
Vishay SIE836DF-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIE836DF-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIE836DF-T1-GE3 to view detailed technical specifications.
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