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Technical Specifications
Vishay SIE850DF-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 5.2W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Resistance | 0.0025R |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SIE850DF-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIE850DF-T1-GE3 to view detailed technical specifications.
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