N-channel enhancement mode power MOSFET in a 10-pin PolarPAK surface-mount package. Features a 30V drain-source voltage, 45A continuous drain current, and low 5.6mOhm drain-source resistance at 10V. Configuration includes single quad drain, dual gate, and quad source. Maximum power dissipation is 5200mW with an operating temperature range of -55°C to 150°C.
PackagePolarPAK
MountingSurface Mount
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Technical Specifications
Vishay SiE864DF-T1-GE3 technical specifications.
General
| Package Family Name | PolarPAK |
| Package/Case | PolarPAK |
| Pin Count | 10 |
| PCB | 10 |
| Package Length (mm) | 6.15 |
| Package Width (mm) | 5.16 |
| Package Height (mm) | 0.8 |
| Seated Plane Height (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Dual Gate Quad Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 45A |
| Maximum Drain Source Resistance | 5.6@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|25@10VnC |
| Typical Gate Charge @ 10V | 25nC |
| Typical Input Capacitance @ Vds | 1510@15VpF |
| Maximum Power Dissipation | 5200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiE864DF-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiE864DF-T1-GE3 to view detailed technical specifications.
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