SIE876DF-T1-GE3

Name: SIE876DF-T1-GE3 Vishay
Brand: Vishay
SKU: SIE876DF-T1-GE3

MOSFET 60V 110A 125W 6.1mohm @ 10V

PackageTO-251-3

MountingThrough Hole, Surface Mount

PolarityN-CHANNEL

Power5.2W

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Vishay SIE876DF-T1-GE3 technical specifications.

Package/Case	TO-251-3
Continuous Drain Current (ID)	60A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	5mR
Drain to Source Voltage (Vdss)	60V
Fall Time	10ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	3.1nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	125W
Mount	Through Hole, Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	5.2W
Radiation Hardening	No
Rds On Max	6.1mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	25ns
Turn-On Delay Time	22ns