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Technical Specifications
Vishay SIF912EDZ-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIF912EDZ-T1-E3 Datasheet
Download the complete datasheet for Vishay SIF912EDZ-T1-E3 to view detailed technical specifications.
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