N-channel MOSFET transistor featuring 400V drain-to-source voltage and 10A continuous drain current. Offers 600mΩ drain-to-source resistance at 10V gate-source voltage. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 33W. Operating temperature range spans from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHF10N40D-E3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 526pF |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHF10N40D-E3 Datasheet
Download the complete datasheet for Vishay SIHF10N40D-E3 to view detailed technical specifications.
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