N-channel Power MOSFET featuring 600V drain-source voltage and 15A continuous drain current. This through-hole component offers a low 280mΩ drain-source on-resistance and a 2V threshold voltage. Operating from -55°C to 150°C, it has a maximum power dissipation of 34W. Packaged in a TO-220-3 configuration, this RoHS compliant MOSFET exhibits fast switching characteristics with turn-on delay of 17ns and fall time of 33ns.
Vishay SIHF15N60E-E3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 34W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | E |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 17ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIHF15N60E-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
