N-Channel Power MOSFET, 600V Vdss, 15A Continuous Drain Current (ID), and 280mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a 2V threshold voltage and 1.35nF input capacitance. Designed for through-hole mounting in a TO-220-3 package, it offers a max power dissipation of 34W and operates within a temperature range of -55°C to 150°C. Turn-on delay is 17ns with a fall time of 33ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power34W
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Technical Specifications
Vishay SIHF15N60E-GE3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 34W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHF15N60E-GE3 Datasheet
Download the complete datasheet for Vishay SIHF15N60E-GE3 to view detailed technical specifications.
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