N-channel power MOSFET featuring 600V drain-source voltage and 21A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 180mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 35W. Key switching characteristics include an 18ns turn-on delay and 35ns fall time. This component is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHF22N60E-GE3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.92nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | E |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHF22N60E-GE3 Datasheet
Download the complete datasheet for Vishay SIHF22N60E-GE3 to view detailed technical specifications.
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