N-channel enhancement mode power MOSFET in a D2PAK (TO-263) surface-mount package. Features a maximum drain-source voltage of 200V and a continuous drain current of 3.3A. Offers a low on-resistance of 1500mΩ at 10V Vgs, with a typical gate charge of 8.2nC. Designed for high-efficiency power switching applications with a maximum power dissipation of 3000mW.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Vishay SiHF610STR-E3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.41(Max) |
| Package Width (mm) | 9.65(Max) |
| Package Height (mm) | 4.83(Max) |
| Seated Plane Height (mm) | 4.83(Max) + 0.25 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-263AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3.3A |
| Maximum Drain Source Resistance | 1500@10VmOhm |
| Typical Gate Charge @ Vgs | 8.2(Max)@10VnC |
| Typical Gate Charge @ 10V | 8.2(Max)nC |
| Typical Input Capacitance @ Vds | 140@25VpF |
| Maximum Power Dissipation | 3000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHF610STR-E3 Datasheet
Download the complete datasheet for Vishay SiHF610STR-E3 to view detailed technical specifications.
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