N-channel Power MOSFET, N-channel enhancement mode, single element, HEXFET process technology. Features 200V maximum drain-source voltage and 9A maximum continuous drain current. Housed in a TO-220AB package with through-hole mounting, this transistor offers a low drain-source on-resistance of 400mOhm at 10V. Maximum power dissipation is 74000mW, with an operating temperature range of -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Vishay SiHF630-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.51(Max) |
| Package Width (mm) | 4.65(Max) |
| Package Height (mm) | 9.01(Max) |
| Seated Plane Height (mm) | 19.14(Max) |
| Pin Pitch (mm) | 2.67(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 9A |
| Maximum Drain Source Resistance | 400@10VmOhm |
| Typical Gate Charge @ Vgs | 43(Max)@10VnC |
| Typical Gate Charge @ 10V | 43(Max)nC |
| Typical Input Capacitance @ Vds | 800@25VpF |
| Maximum Power Dissipation | 74000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHF630-E3 Datasheet
Download the complete datasheet for Vishay SiHF630-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.