N-channel enhancement mode power MOSFET featuring a 450V maximum drain-source voltage and 8.8A maximum continuous drain current. This single-element transistor is housed in a TO-220 through-hole package with 3 pins and a tab. Key specifications include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 630mΩ at 10V, and a typical gate charge of 80nC at 10V. Operating temperature range is from -55°C to 150°C, with a maximum power dissipation of 125W.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Vishay SiHF744 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 450V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 8.8A |
| Maximum Drain Source Resistance | 630@10VmOhm |
| Typical Gate Charge @ Vgs | 80(Max)@10VnC |
| Typical Gate Charge @ 10V | 80(Max)nC |
| Typical Input Capacitance @ Vds | 1400@25VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHF744 Datasheet
Download the complete datasheet for Vishay SiHF744 to view detailed technical specifications.
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