N-channel enhancement mode power MOSFET featuring a 500V drain-source voltage and 8A continuous drain current. This single element transistor is housed in a TO-220AB through-hole package with 3 pins and a tab, offering a maximum power dissipation of 125W. Key electrical characteristics include a ±20V gate-source voltage, 4V gate threshold voltage, and 850mΩ maximum drain-source resistance at 10V. Operating temperature range is from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Vishay SiHF840-E3 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.51(Max)
Package Width (mm)
4.65(Max)
Package Height (mm)
9.01(Max)
Seated Plane Height (mm)
19.14(Max)
Pin Pitch (mm)
2.67(Max)
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
8A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
850@10VmOhm
Typical Gate Charge @ Vgs
63(Max)@10VnC
Typical Gate Charge @ 10V
63(Max)nC
Typical Input Capacitance @ Vds
1300@25VpF
Maximum Power Dissipation
125000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
310pF
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Vishay SiHF840-E3 Datasheet
Download the complete datasheet for Vishay SiHF840-E3 to view detailed technical specifications.
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