N-channel MOSFET with 500V drain-source voltage and 8.7A continuous drain current. Features 850mOhm drain-source resistance at 10V gate-source voltage. Operates from -55°C to 150°C with a maximum power dissipation of 33W. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 13ns and fall time of 11ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay SIHF8N50D-E3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.8mm |
| Input Capacitance | 527pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIHF8N50D-E3 Datasheet
Download the complete datasheet for Vishay SIHF8N50D-E3 to view detailed technical specifications.
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