P-channel Power MOSFET featuring 100V drain-source voltage and 12A continuous drain current. Surface-mount D2PAK package (TO-263AB) with 3 pins and gull-wing leads. Maximum power dissipation of 3700mW, operating temperature range of -55°C to 175°C. Low on-resistance of 300mΩ at 10V Vgs.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Vishay SiHF9530STL-E3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.41(Max)
Package Width (mm)
9.65(Max)
Package Height (mm)
4.83(Max)
Seated Plane Height (mm)
4.83(Max) + 0.25
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-263AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
12A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
300@10VmOhm
Typical Gate Charge @ Vgs
38(Max)@10VnC
Typical Gate Charge @ 10V
38(Max)nC
Typical Input Capacitance @ Vds
860@25VpF
Maximum Power Dissipation
3700mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Typical Output Capacitance
340pF
Compliance
Cage Code
18612
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SiHF9530STL-E3 Datasheet
Download the complete datasheet for Vishay SiHF9530STL-E3 to view detailed technical specifications.
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