P-channel Power MOSFET featuring a 200V maximum drain-source voltage and 1.8A continuous drain current. This through-hole component is housed in a TO-220AB package with 3 pins and a tab, designed for easy PCB mounting. It operates with a ±20V gate-source voltage and a 4V gate threshold voltage, offering a maximum drain-source on-resistance of 3000 mOhm at 10V. With a maximum power dissipation of 20000 mW, this single-element enhancement mode MOSFET is suitable for a wide operating temperature range from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Vishay SiHF9610 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.41(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
9.01(Max)
Seated Plane Height (mm)
19.14(Max)
Pin Pitch (mm)
2.67(Max)
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
1.8A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
3000@10VmOhm
Typical Gate Charge @ Vgs
11(Max)@10VnC
Typical Gate Charge @ 10V
11(Max)nC
Typical Input Capacitance @ Vds
170@25VpF
Maximum Power Dissipation
20000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
50pF
Compliance
Cage Code
18612
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SiHF9610 Datasheet
Download the complete datasheet for Vishay SiHF9610 to view detailed technical specifications.
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