N-channel Power MOSFET featuring 100V drain-source voltage and 1.3A continuous drain current. This single, dual-drain enhancement mode transistor is housed in a 4-pin HVMDIP through-hole package with a 2.54mm pin pitch. Key specifications include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 270mΩ at 10V, and a maximum power dissipation of 1300mW. Operating temperature range spans from -55°C to 175°C.
PackageHVMDIP
MountingThrough Hole
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Technical Specifications
Vishay SiHFD120 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | DIP |
| Package/Case | HVMDIP |
| Lead Shape | Through Hole |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 6.29(Max) |
| Package Height (mm) | 3.37(Max) |
| Seated Plane Height (mm) | 4.57(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 1.3A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 270@10VmOhm |
| Typical Gate Charge @ Vgs | 16(Max)@10VnC |
| Typical Gate Charge @ 10V | 16(Max)nC |
| Typical Input Capacitance @ Vds | 360@25VpF |
| Maximum Power Dissipation | 1300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Typical Output Capacitance | 150pF |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHFD120 Datasheet
Download the complete datasheet for Vishay SiHFD120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.