N-channel Power MOSFET, 500V drain-source voltage, 0.37A continuous drain current. Features a 4-pin HVMDIP through-hole package with 2.54mm pin pitch. Single dual drain configuration with enhancement mode channel. Maximum power dissipation of 1000mW, operating temperature range of -55°C to 150°C.
PackageHVMDIP
MountingThrough Hole
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Technical Specifications
Vishay SiHFD420 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | DIP |
| Package/Case | HVMDIP |
| Lead Shape | Through Hole |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 6.29(Max) |
| Package Height (mm) | 3.37(Max) |
| Seated Plane Height (mm) | 4.57(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.37A |
| Maximum Drain Source Resistance | 3000@10VmOhm |
| Typical Gate Charge @ Vgs | 24(Max)@10VnC |
| Typical Gate Charge @ 10V | 24(Max)nC |
| Typical Input Capacitance @ Vds | 360@25VpF |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHFD420 Datasheet
Download the complete datasheet for Vishay SiHFD420 to view detailed technical specifications.
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