N-channel enhancement mode power MOSFET featuring a 250V drain-source voltage and 7.9A continuous drain current. This through-hole component is housed in a TO-220 Full-Pak package with a 3-pin configuration and tab. Key specifications include a maximum drain-source on-resistance of 280mΩ at 10V, typical gate charge of 68nC at 10V, and typical input capacitance of 1300pF at 25V. Maximum power dissipation is 40W, with an operating temperature range of -55°C to 150°C.
PackageTO-220 Full-Pak
MountingThrough Hole
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Technical Specifications
Vishay SiHFI644G-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 Full-Pak |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.63(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 16.12(Max) |
| Seated Plane Height (mm) | 19.62(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 250V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7.9A |
| Maximum Drain Source Resistance | 280@10VmOhm |
| Typical Gate Charge @ Vgs | 68(Max)@10VnC |
| Typical Gate Charge @ 10V | 68(Max)nC |
| Typical Input Capacitance @ Vds | 1300@25VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Vishay SiHFI644G-E3 Datasheet
Download the complete datasheet for Vishay SiHFI644G-E3 to view detailed technical specifications.
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