N-channel enhancement mode power MOSFET featuring a 900V drain-source voltage and 1.9A continuous drain current. This single-element transistor is housed in a TO-220 Full-Pak through-hole package with a 3-pin configuration and tab. Key specifications include a maximum power dissipation of 35W, a gate-source voltage of ±20V, and a drain-source on-resistance of 3700mΩ at 10V. Operating temperature range is from -55°C to 150°C.
PackageTO-220 Full-Pak
MountingThrough Hole
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Technical Specifications
Vishay SiHFIBF30G-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 Full-Pak |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.63(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 16.12(Max) |
| Seated Plane Height (mm) | 19.62(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 1.9A |
| Maximum Drain Source Resistance | 3700@10VmOhm |
| Typical Gate Charge @ Vgs | 78(Max)@10VnC |
| Typical Gate Charge @ 10V | 78(Max)nC |
| Typical Input Capacitance @ Vds | 1200@25VpF |
| Maximum Power Dissipation | 35000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Vishay SiHFIBF30G-E3 Datasheet
Download the complete datasheet for Vishay SiHFIBF30G-E3 to view detailed technical specifications.
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