N-channel Power MOSFET, 60V drain-source voltage, 2.7A continuous drain current. Features 200mΩ maximum drain-source resistance at 10V, 11nC typical gate charge at 10V, and 300pF typical input capacitance at 25V. Housed in a 4-pin SOT-223 (TO-261AA) surface-mount package with gull-wing leads, offering a single dual-drain configuration. Maximum power dissipation is 2000mW, with an operating temperature range of -55°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Vishay SiHFL014 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.7(Max) |
| Package Width (mm) | 3.7(Max) |
| Package Height (mm) | 1.8(Max) - 0.06 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 2.7A |
| Maximum Drain Source Resistance | 200@10VmOhm |
| Typical Gate Charge @ Vgs | 11(Max)@10VnC |
| Typical Gate Charge @ 10V | 11(Max)nC |
| Typical Input Capacitance @ Vds | 300@25VpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHFL014 Datasheet
Download the complete datasheet for Vishay SiHFL014 to view detailed technical specifications.
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