N-channel Power MOSFET featuring 600V drain-source voltage and 15A continuous drain current. This single-element transistor operates in enhancement mode with a maximum drain-source on-resistance of 460mΩ at 10V. Packaged in a TO-247 through-hole configuration, it offers a typical gate charge of 100nC and input capacitance of 2720pF. The component supports a maximum power dissipation of 280W and operates across a temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Vishay SiHFP15N60L-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.87(Max) |
| Package Width (mm) | 5.31(Max) |
| Package Height (mm) | 20.7(Max) |
| Seated Plane Height (mm) | 24.99(Max) |
| Pin Pitch (mm) | 5.46 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 15A |
| Maximum Drain Source Resistance | 460@10VmOhm |
| Typical Gate Charge @ Vgs | 100(Max)@10VnC |
| Typical Gate Charge @ 10V | 100(Max)nC |
| Typical Input Capacitance @ Vds | 2720@25VpF |
| Maximum Power Dissipation | 280000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Vishay SiHFP15N60L-E3 Datasheet
Download the complete datasheet for Vishay SiHFP15N60L-E3 to view detailed technical specifications.
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