N-channel enhancement mode power MOSFET featuring 450V drain-source voltage and 9.5A continuous drain current. This single-element transistor is housed in a TO-247 package with a 3-pin through-hole mounting configuration and a tab. Key specifications include a maximum drain-source on-resistance of 630 mOhm at 10V, typical gate charge of 80 nC at 10V, and typical input capacitance of 1400 pF at 25V. Maximum power dissipation is 150W, with an operating temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Vishay SiHFP344 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.87(Max) |
| Package Width (mm) | 5.31(Max) |
| Package Height (mm) | 20.7(Max) |
| Seated Plane Height (mm) | 24.99(Max) |
| Pin Pitch (mm) | 5.46 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 450V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 9.5A |
| Maximum Drain Source Resistance | 630@10VmOhm |
| Typical Gate Charge @ Vgs | 80(Max)@10VnC |
| Typical Gate Charge @ 10V | 80(Max)nC |
| Typical Input Capacitance @ Vds | 1400@25VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHFP344 Datasheet
Download the complete datasheet for Vishay SiHFP344 to view detailed technical specifications.
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