N-channel Power MOSFET featuring 500V drain-source voltage and 11A continuous drain current. This single-element enhancement mode transistor is housed in a TO-247AC package with a 3-pin through-hole configuration. Key specifications include a maximum gate-source voltage of ±20V, a typical gate charge of 84nC at 10V, and input capacitance of 1900pF at 25V. Maximum power dissipation reaches 180W, with an operating temperature range of -55°C to 150°C.
PackageTO-247AC
MountingThrough Hole
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Technical Specifications
Vishay SiHFP448-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247AC |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.87(Max) |
| Package Width (mm) | 5.31(Max) |
| Package Height (mm) | 20.82(Max) |
| Seated Plane Height (mm) | 25.11(Max) |
| Pin Pitch (mm) | 5.46 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247AC |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 11A |
| Maximum Drain Source Resistance | 600@10VmOhm |
| Typical Gate Charge @ Vgs | 84(Max)@10VnC |
| Typical Gate Charge @ 10V | 84(Max)nC |
| Typical Input Capacitance @ Vds | 1900@25VpF |
| Maximum Power Dissipation | 180000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Vishay SiHFP448-E3 Datasheet
Download the complete datasheet for Vishay SiHFP448-E3 to view detailed technical specifications.
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