N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 6.7A continuous drain current. This single-element transistor offers a maximum drain-source on-resistance of 1600 mOhm at 10V. Housed in a TO-247AC package with 3 pins and a tab, it supports through-hole mounting. Key electrical characteristics include a ±20V gate-source voltage rating and a maximum power dissipation of 190W.
PackageTO-247AC
MountingThrough Hole
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Technical Specifications
Vishay SiHFPF50-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247AC |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.87(Max) |
| Package Width (mm) | 5.31(Max) |
| Package Height (mm) | 20.7(Max) |
| Seated Plane Height (mm) | 24.99(Max) |
| Pin Pitch (mm) | 5.46 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247AC |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 6.7A |
| Maximum Drain Source Resistance | 1600@10VmOhm |
| Typical Gate Charge @ Vgs | 200(Max)@10VnC |
| Typical Gate Charge @ 10V | 200(Max)nC |
| Typical Input Capacitance @ Vds | 2900@25VpF |
| Maximum Power Dissipation | 190000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Vishay SiHFPF50-E3 Datasheet
Download the complete datasheet for Vishay SiHFPF50-E3 to view detailed technical specifications.
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