N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 7.7A continuous drain current. This single-element transistor is housed in a surface-mount TO-252AA (DPAK) package with 3 pins and a tab, offering a maximum power dissipation of 2500mW. It operates across a temperature range of -55°C to 150°C, with a typical gate charge of 16nC and input capacitance of 360pF.
PackageDPAK
MountingSurface Mount
Quick Jump:
Technical Specifications
Vishay SiHFR120-E3 technical specifications.
General
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Seated Plane Height (mm) | 2.52(Max) |
| Pin Pitch (mm) | 2.28 |
| Package Weight (g) | 0.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7.7A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 270@10VmOhm |
| Typical Gate Charge @ Vgs | 16(Max)@10VnC |
| Typical Gate Charge @ 10V | 16(Max)nC |
| Typical Input Capacitance @ Vds | 360@25VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Vishay SiHFR120-E3 Datasheet
Download the complete datasheet for Vishay SiHFR120-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.