N-channel Power MOSFET featuring a 500V drain-source voltage and 5A continuous drain current. This single enhancement mode MOSFET is housed in a surface-mount DPAK (TO-252AA) package with 3 pins and a tab, offering a maximum power dissipation of 110W. Key electrical characteristics include a ±30V gate-source voltage, 4.5V gate threshold voltage, and 1700mOhm drain-source resistance at 10V. Operating temperature range is -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Vishay SiHFR430ATR-E3 technical specifications.
General
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Seated Plane Height (mm) | 2.52(Max) |
| Pin Pitch (mm) | 2.28 |
| Package Weight (g) | 0.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 5A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 1700@10VmOhm |
| Typical Gate Charge @ Vgs | 24(Max)@10VnC |
| Typical Gate Charge @ 10V | 24(Max)nC |
| Typical Input Capacitance @ Vds | 750@1VpF |
| Maximum Power Dissipation | 110000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Vishay SiHFR430ATR-E3 Datasheet
Download the complete datasheet for Vishay SiHFR430ATR-E3 to view detailed technical specifications.
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