N-channel enhancement mode power MOSFET, 100V drain-source voltage, 4.3A continuous drain current. Features 540mOhm maximum drain-source resistance at 10V, 8.3nC typical gate charge, and 180pF typical input capacitance. Packaged in a TO-251AA (IPAK) plastic through-hole mount with 3 pins and a tab, offering a maximum power dissipation of 25000mW. Operates across a temperature range of -55°C to 150°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Vishay SiHFU110 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.39(Max) |
| Package Height (mm) | 6.22(Max) |
| Seated Plane Height (mm) | 7.49(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4.3A |
| Maximum Drain Source Resistance | 540@10VmOhm |
| Typical Gate Charge @ Vgs | 8.3(Max)@10VnC |
| Typical Gate Charge @ 10V | 8.3(Max)nC |
| Typical Input Capacitance @ Vds | 180@25VpF |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHFU110 Datasheet
Download the complete datasheet for Vishay SiHFU110 to view detailed technical specifications.
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