P-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 5.1A continuous drain current. This single-element transistor is housed in a TO-251AA package with 3 through-hole pins and a tab, offering a maximum power dissipation of 2500mW. Key electrical characteristics include a ±20V gate-source voltage, 4V gate threshold voltage, and 500mOhm drain-source resistance at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTO-251AA
MountingThrough Hole
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Technical Specifications
Vishay SiHFU9014-E3 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | TO-251AA |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.38(Max) |
| Package Height (mm) | 6.22(Max) |
| Seated Plane Height (mm) | 7.49(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5.1A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 500@10VmOhm |
| Typical Gate Charge @ Vgs | 12(Max)@10VnC |
| Typical Gate Charge @ 10V | 12(Max)nC |
| Typical Input Capacitance @ Vds | 270@25VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Vishay SiHFU9014-E3 Datasheet
Download the complete datasheet for Vishay SiHFU9014-E3 to view detailed technical specifications.
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