P-channel Power MOSFET with 100V drain-source voltage and 3.1A continuous drain current. Features a TO-251AA package with through-hole mounting, a single enhancement-mode P-channel element, and a maximum power dissipation of 2500mW. Maximum gate-source voltage is ±20V, with a typical gate charge of 8.7nC at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTO-251AA
MountingThrough Hole
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Technical Specifications
Vishay SiHFU9110 technical specifications.
General
| Package/Case | TO-251AA |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.39(Max) |
| Package Height (mm) | 6.22(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3.1A |
| Maximum Drain Source Resistance | 1200@10VmOhm |
| Typical Gate Charge @ Vgs | 8.7(Max)@10VnC |
| Typical Gate Charge @ 10V | 8.7(Max)nC |
| Typical Input Capacitance @ Vds | 200@25VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SiHFU9110 Datasheet
Download the complete datasheet for Vishay SiHFU9110 to view detailed technical specifications.
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