N-channel Power MOSFET, featuring a 60V drain-source voltage and 50A continuous drain current. This single-element HEXFET technology component operates in enhancement mode with a maximum drain-source resistance of 28mΩ at 10V. Packaged in a TO-220AB through-hole configuration, it offers a typical gate charge of 67nC at 10V and input capacitance of 1900pF at 25V. Maximum power dissipation is 150W, with an operating temperature range of -55°C to 175°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Vishay SiHFZ44R-E3 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.51(Max)
Package Width (mm)
4.65(Max)
Package Height (mm)
9.01(Max)
Seated Plane Height (mm)
19.14(Max)
Pin Pitch (mm)
2.67(Max)
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
50A
Material
Si
Maximum Drain Source Resistance
28@10VmOhm
Typical Gate Charge @ Vgs
67(Max)@10VnC
Typical Gate Charge @ 10V
67(Max)nC
Typical Input Capacitance @ Vds
1900@25VpF
Maximum Power Dissipation
150000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Vishay SiHFZ44R-E3 Datasheet
Download the complete datasheet for Vishay SiHFZ44R-E3 to view detailed technical specifications.
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